Chalcogenide Materials Engineering for Phase‐Change Memory and Future Electronics Applications: From Sb–Te to Bi–Te

Author:

Saito Yuta1ORCID,Mitrofanov Kirill V.1ORCID,Makino Kotaro1ORCID,Fons Paul12ORCID,Kolobov Alexander V.13ORCID,Tominaga Junji1ORCID,Uesugi Fumihiko4,Takeguchi Masaki4

Affiliation:

1. Device Technology Research Institute National Institute of Advanced Industrial Science and Technology (AIST) Tsukuba Central 5, Higashi 1-1-1 Tsukuba 305-8565 Japan

2. Department of Electronics and Electrical Engineering, Faculty of Science and Technology Keio University 3-14-1 Hiyoshi, Kohoku-ku Yokohama 223-8522 Japan

3. Department of Physical Electronics, Faculty of Physics Herzen State Pedagogical University of Russia 48 Moika Embankment St Petersburg 191186 Russia

4. Transmission Electron Microscopy Station National Institute for Materials Science (NIMS) Sengen 1-2-1 Tsukuba 305-0047 Japan

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Reference46 articles.

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