Toward ultimate nonvolatile resistive memories: The mechanism behind ovonic threshold switching revealed-Reference-Cited by-同舟云学术

Toward ultimate nonvolatile resistive memories: The mechanism behind ovonic threshold switching revealed

Published:2020-02-28 Issue:9 Volume:6 Page:
ISSN:2375-2548
Container-title:Science Advances
language:en
Short-container-title:Sci. Adv.

Author:

Noé Pierre¹^ORCID,Verdy Anthonin¹^ORCID,d’Acapito Francesco²^ORCID,Dory Jean-Baptiste¹^ORCID,Bernard Mathieu¹,Navarro Gabriele¹,Jager Jean-Baptiste³,Gaudin Jérôme⁴^ORCID,Raty Jean-Yves¹⁵^ORCID

Affiliation:

1. Université Grenoble Alpes, CEA, LETI, MINATEC Campus, 17 avenue des Martyrs, F-38000 Grenoble, France.

2. CNR-IOM-OGG c/o ESRF–The European Synchrotron, 71 rue des Martyrs, F-38043 Grenoble, France.

3. Université Grenoble Alpes, CEA, INAC, MINATEC Campus, 17 avenue des Martyrs, F-38000 Grenoble, France.

4. CELIA, Université de Bordeaux, CEA, CNRS, UMR 5107, 351 Cours de la Libération, F-33405 Talence, France.

5. CESAM-Physics of Solids Interfaces and Nanostructures, B5, Université de Liège, B4000 Sart-Tilman, Belgium.

Abstract

We reveal the microscopic origin of the ovonic threshold switching mechanism.

Funder

FP7 Joint Technology Initiatives

Agence Nationale de la Recherche

Fonds De La Recherche Scientifique - FNRS

Walloon Region

Communauté Française de Belgique

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

Reference63 articles.

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