Controlled Synthesis and Electrical Properties Study of GeAs₂Te₄ Single Crystals

Abstract

Exploration of the optoelectronic memristor is required to investigate the photoelectric properties of materials. The traditional memristor material GeAs2Te4 is hopeful to be developed into a new type of optoelectronic memristor. However, acquiring high-quality single crystals remains challenging, and the electrical properties of single crystals of GeAs2Te4 need to be explored. Herein, a controlled method is introduced to grow reliable quality GeAs2Te4 single crystals, and the electrical and optoelectronic properties are studied. The photodetector based on GeAs2Te4 exhibits acceptable optoelectronic performance at designed low temperatures. The responsivity and detectivity of the GeAs2Te4-based photodetector reached the value of about 0.137 A W-1 and 6.9×107 Jones, respectively. It is promising to introduce this family of materials into the field of photodetector and also maybe further in the area of optoelectronic memristors.