High‐Throughput Screening for Phase‐Change Memory Materials-Reference-Cited by-同舟云学术

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High‐Throughput Screening for Phase‐Change Memory Materials

Published:2021-03-17 Issue:21 Volume:31 Page:2009803
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Liu Yu‐Ting¹,Li Xian‐Bin¹^ORCID,Zheng Hui²,Chen Nian‐Ke¹^ORCID,Wang Xue‐Peng¹,Zhang Xu‐Lin¹,Sun Hong‐Bo¹³^ORCID,Zhang Shengbai⁴

Affiliation:

1. State Key Laboratory of Integrated Optoelectronics College of Electronic Science and Engineering Jilin University Changchun 130012 China

2. Department of Nano Engineering University of California San Diego San Diego CA 92093‐0448 USA

3. State Key Lab of Precision Measurement Technology and Instruments Department of Precision Instrument Tsinghua University Beijing 100084 China

4. Department of Physics, Applied Physics, and Astronomy Rensselaer Polytechnic Institute Troy NY 12180 USA

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.202009803

Reference94 articles.

1. Understanding the phase-change mechanism of rewritable optical media

2. Low-cost and nanoscale non-volatile memory concept for future silicon chips

3. Memory materials and devices: From concept to application

4. Phase-change materials for rewriteable data storage

5. Phase-Change Memory—Towards a Storage-Class Memory

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