Ferroelectric Memristor Based on Hf 0.5 Zr 0.5 O 2 Thin Film Combining Memristive and Neuromorphic Functionalities-Reference-Cited by-同舟云学术

Ferroelectric Memristor Based on Hf 0.5 Zr 0.5 O 2 Thin Film Combining Memristive and Neuromorphic Functionalities

Published:2020-06-30 Issue:9 Volume:14 Page:2000224
ISSN:1862-6254
Container-title:physica status solidi (RRL) – Rapid Research Letters
language:en
Short-container-title:Physica Rapid Research Ltrs

Author:

Zhao Zhen¹,Yan Xiaobing¹²^ORCID

Affiliation:

1. College of Electron and Information Engineering Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province Hebei University Baoding 071002 China

2. Department of Materials Science and Engineering National University of Singapore Singapore 117576 Singapore

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.202000224

Reference32 articles.

1. Current status and prospects of memristors based on novel 2D materials

2. The missing memristor found

3. A million spiking-neuron integrated circuit with a scalable communication network and interface

4. Experimental demonstration of associative memory with memristive neural networks

5. Self-Assembled Networked PbS Distribution Quantum Dots for Resistive Switching and Artificial Synapse Performance Boost of Memristors

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