Air‐Stable Wide‐Bandgap 2D Semiconductor ZnIn 2 S 4-Reference-Cited by-同舟云学术

Air‐Stable Wide‐Bandgap 2D Semiconductor ZnIn 2 S 4

Published:2020-05-04 Issue:7 Volume:14 Page:2000085
ISSN:1862-6254
Container-title:physica status solidi (RRL) – Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Weng Shirui¹²,Zhen Weili¹,Li Yaodong¹,Yan Xiu¹,Han Hui³,Huang Hui³,Pi Li¹²⁴,Zhu Wenka¹,Li Hui³,Zhang Changjin¹³⁴^ORCID

Affiliation:

1. Anhui Province Key Laboratory of Condensed Matter Physics at Extreme ConditionsHigh Magnetic Field Laboratory of Anhui ProvinceChinese Academy of Sciences Hefei 230031 China

2. Hefei National Laboratory for Physical Sciences at MicroscaleUniversity of Science and Technology of China Hefei 230026 China

3. Institutes of Physical Science and Information TechnologyAnhui University Hefei 230601 China

4. Collaborative Innovation Center of Advanced MicrostructuresNanjing University Nanjing 210093 China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.202000085

Reference33 articles.

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3. Integrated Circuits Based on Bilayer MoS2 Transistors

4. MoS 2 transistors with 1-nanometer gate lengths

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