Affiliation:
1. Department of Physics The University of Hong Kong Hong Kong 999077 P. R. China
2. Department of Physics and Astronomy University of Manchester Manchester M13 9PL UK
3. Hubei Yangtze Memory Laboratories Wuhan 430205 P. R. China
4. School of Microelectronics Hubei University Wuhan 430062 P. R. China
5. Institute of Materials Science and Nanotechnology Bilkent University UNAM Ankara 06800 Turkey
6. School of Materials Science and Engineering Beihang University Beijing 100191 P. R. China
Abstract
Abstract2D thin films, possessing atomically thin thickness, are emerging as promising candidates for next‐generation electronic devices, due to their novel properties and high performance. In the early years, a wide variety of 2D materials are prepared using several methods (mechanical/liquid exfoliation, chemical vapor deposition, etc.). However, the limited size of 2D flakes hinders their fundamental research and device applications, and hence the effective large‐scale preparation of 2D films is still challenging. Recently, pulsed laser deposition (PLD) has appeared to be an impactful method for wafer‐scale growth of 2D films, owing to target‐maintained stoichiometry, high growth rate, and efficiency. In this review, the recent advances on the PLD preparation of 2D films are summarized, including the growth mechanisms, strategies, and materials classification. First, efficacious strategies of PLD growth are highlighted. Then, the growth, characterization, and device applications of various 2D films are presented, such as graphene, h‐BN, MoS2, BP, oxide, perovskite, semi‐metal, etc. Finally, the potential challenges and further research directions of PLD technique is envisioned.
Funder
National Key Research and Development Program of China
National Natural Science Foundation of China
Subject
General Materials Science,General Chemistry