Ferroelectric, Analog Resistive Switching in Back‐End‐of‐Line Compatible TiN/HfZrO 4 /TiO x Junctions
Author:
Affiliation:
1. Science and Technology IBM Research GmbH – Zurich Research Laboratory Rüschlikon CH-8803 Switzerland
2. Integrated Systems Laboratory ETH Zurich Zurich CH-8092 Switzerland
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.202000524
Reference47 articles.
1. Publisher Correction: Memory devices and applications for in-memory computing
2. In-Memory Big Data Management and Processing: A Survey
3. If it’s pinched it’s a memristor
4. Memristive devices for computing
5. Neuro-Inspired Computing With Emerging Nonvolatile Memorys
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