Cycling Waveform Dependent Wake-Up and ON/OFF Ratio in Al2O3/Hf0.5Zr0.5O2 Ferroelectric Tunnel Junction Devices-Reference-Cited by-同舟云学术

Cycling Waveform Dependent Wake-Up and ON/OFF Ratio in Al₂O₃/Hf_0.5Zr_0.5O₂ Ferroelectric Tunnel Junction Devices

Published:2023-03-10 Issue:3 Volume:5 Page:1478-1488
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Shajil Nair Keerthana¹²,Holzer Marco¹²,Dubourdieu Catherine¹²,Deshpande Veeresh¹^ORCID

Affiliation:

1. Helmholtz-Zentrum-Berlin für Materialien und Energie, Institute “Functional Oxides for Energy Efficient Information Technology”, Hahn-Meitner Platz 1, 14109 Berlin, Germany

2. Physical Chemistry, Freie Universität Berlin, Arnimallee 22, 14195 Berlin, Germany

Funder

H2020 Future and Emerging Technologies

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.2c01492

Reference43 articles.

1. Ferroelectricity in hafnium oxide thin films

2. Ferroelectricity in Simple Binary ZrO2 and HfO2

3. The Past, the Present, and the Future of Ferroelectric Memories

4. Ferroelectric Tunneling Junctions Based on Aluminum Oxide/ Zirconium-Doped Hafnium Oxide for Neuromorphic Computing

5. Mo, F.; Tagawa, Y.; Saraya, T.; Hiramoto, T.; Kobayashi, M. In Scalability Study on Ferroelectric-HfO2 Tunnel Junction Memory Based on Non-equilibrium Green Function Method, 19th Non-Volatile Memory Technology Symposium (NVMTS), 2019; pp 1–5.

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