Scalability Study on Ferroelectric-HfO2 Tunnel Junction Memory Based on Non-equilibrium Green Function Method-Reference-Cited by-同舟云学术

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Scalability Study on Ferroelectric-HfO2 Tunnel Junction Memory Based on Non-equilibrium Green Function Method

Published:2019-10 Issue: Volume: Page:
ISSN:
Container-title:2019 19th Non-Volatile Memory Technology Symposium (NVMTS)
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Author:

Mo Fei,Tagawa Yusaku,Saraya Takuya,Hiramoto Toshiro,Kobayashi Masaharu

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8979203/8986154/08986219.pdf?arnumber=8986219

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Tunneling electroresistance effect and low ON-state resistance-area product in monolayer-In2Se3-based van der Waals ferroelectric tunnel junctions;Surfaces and Interfaces;2024-03

2. Artificial neural network models for metal-ferroelectric-insulator-semiconductor ferroelectric tunnel junction memristor;Microelectronics Journal;2024-02

3. Performance comparison of planar and cylindrical ferroelectric tunnel junctions;Japanese Journal of Applied Physics;2024-01-30

4. Comparative Analysis of n- and p-Type Ferroelectric Tunnel Junctions Through Understanding of Non-FE Resistance Switching;IEEE Electron Device Letters;2023-10

5. A Neural Network Model for N-Type Metal-Ferroelectric-Insulator-Semiconductor Ferroelectric Tunnel Junction;2023 International Applied Computational Electromagnetics Society Symposium (ACES-China);2023-08-15

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