Oxygen Incorporation Kinetics in Vicinal m (10−10) Gallium Nitride Growth by Metal‐Organic Vapor Phase Epitaxy-Reference-Cited by-同舟云学术

Oxygen Incorporation Kinetics in Vicinal m (10−10) Gallium Nitride Growth by Metal‐Organic Vapor Phase Epitaxy

Published:2020-04-20 Issue:6 Volume:14 Page:2000142
ISSN:1862-6254
Container-title:physica status solidi (RRL) – Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Yosho Daichi¹^ORCID,Shintaku Fumiya¹,Inatomi Yuya¹,Kangawa Yoshihiro¹²³,Iwata Jun-Ichi⁴,Oshiyama Atsushi³,Shiraishi Kenji³,Tanaka Atsushi³,Amano Hiroshi³

Affiliation:

1. Department of Aeronautics and Astronautics Kyushu University Fukuoka 819-0395 Japan

2. Research Institute for Applied Mechanics (RIAM) Kyushu University Fukuoka 816-8580 Japan

3. Institute of Materials and Systems for Sustainability (IMaSS) Nagoya University Nagoya 464-8601 Japan

4. AdvanceSoft Corporation Tokyo 101-0062 Japan

Funder

Ministry of Education, Culture, Sports, Science and Technology

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.202000142

Reference22 articles.

1. The 2018 GaN power electronics roadmap

2. Gallium nitride vertical power devices on foreign substrates: a review and outlook

3. Red to blue wavelength emission of N-polar $(000\bar{1})$ InGaN light-emitting diodes grown by metalorganic vapor phase epitaxy

4. Roles of carbon impurities and intrinsic nonradiative recombination centers on the carrier recombination processes of GaN crystals

5. Recent progress of GaN power devices for automotive applications

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