Step-edge segregation model for step-velocity dependences of carbon and oxygen concentrations in GaN layers grown on m-plane GaN

Abstract

Abstract Reported step-velocity dependence of carbon concentrations in GaN layers grown on m-plane GaN at 1273 K was found to be reproduced by a step-edge segregation model, not by a kink segregation model. In the former model, the fitted diffusion coefficient of carbon in GaN was the same as that in the cases of Ga- and N-plane GaN. The same model was then applied to reproduce the reported step-velocity dependence of oxygen concentrations in GaN layers grown on m-plane GaN. The fitted diffusion coefficient of oxygen was found to locate in the reported range at 1273 K.