Influence of fin width and gate structure on the performance of AlGaN/GaN fin‐shaped HEMTs-Reference-Cited by-同舟云学术

Influence of fin width and gate structure on the performance of AlGaN/GaN fin‐shaped HEMTs

Published:2019-06-17 Issue:3 Volume:33 Page:
ISSN:0894-3370
Container-title:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
language:en
Short-container-title:Int J Numer Model

Author:

Zhang Meng¹^ORCID,Ma Xiaohua²,Mi Minhan²^ORCID,Yang Ling¹,Wu Sheng²,Hou Bin¹,Zhu Qing¹,Zhang Hengshuang²,Wu Mei²,Hao Yue²

Affiliation:

1. School of Advanced Materials and NanotechnologyXidian University Xi'an China

2. Key Laboratory of Wide Band‐Gap Semiconductor Materials and Devices, School of MicroelectronicsXidian University Xi'an China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modeling and Simulation

Link

Reference25 articles.

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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4. Physics based Compact Model for Drain Current in Fin-Shaped GaN MIS-HEMTs;2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2021-12-05