Physics based Compact Model for Drain Current in Fin-Shaped GaN MIS-HEMTs-Reference-Cited by-同舟云学术

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Physics based Compact Model for Drain Current in Fin-Shaped GaN MIS-HEMTs

Published:2021-12-05 Issue: Volume: Page:
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Container-title:2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
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Author:

M P Sruthi,Shanbhag Ajay,Chakravorty Anjan,DasGupta Nandita,DasGupta Amitava

Funder

Science and Engineering Research Board (SERB), Govt. of India

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9682201/9682202/09682482.pdf?arnumber=9682482

Reference19 articles.

1. Influence of fin width and gate structure on the performance of AlGaN/GaN fin‐shaped HEMTs

2. Normally-Off InAlN/GaN Fin-MOSHEMT with Fluorine Treatment

3. Performance Improvement and Sub-60 mV/Decade Swing in AlGaN/GaN FinFETs by Simultaneous Activation of 2DEG and Sidewall MOS Channels

4. Compact Physical Models for AlGaN/GaN MIS-FinFET on Threshold Voltage and Saturation Current

5. Physical mechanism of fin-gate AlGaN/GaN MIS-HEMT: Vth model

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Person Detection and Tracking Using UAV and Neural Networks;2023 31st Mediterranean Conference on Control and Automation (MED);2023-06-26

2. Scalable Charge-Based Compact Model for Drain Current in Fin-Shaped GaN HEMTs;IEEE Transactions on Electron Devices;2023-03

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