Author:
Ren Kailin,Liang Yung C.,Huang Chih-Fang
Cited by
13 articles.
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1. Subthreshold Swing Model of GaN-Based Fin-Gate High Electron Mobility Transistors;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27
2. Scalable Charge-Based Compact Model for Drain Current in Fin-Shaped GaN HEMTs;IEEE Transactions on Electron Devices;2023-03
3. Physics based Compact Model for Drain Current in Fin-Shaped GaN MIS-HEMTs;2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2021-12-05
4. GaN-based power devices: Physics, reliability, and perspectives;Journal of Applied Physics;2021-11-14
5. Analytical Model for Gate Capacitance and Threshold Voltage in Fin-Shaped GaN HEMTs;IEEE Transactions on Electron Devices;2021-09