Numerical modeling of process parameters on RF metrics in FinFETs, junctionless, and gate-all-around devices-Reference-Cited by-同舟云学术

Numerical modeling of process parameters on RF metrics in FinFETs, junctionless, and gate-all-around devices

Published:2016-09-16 Issue:5 Volume:30 Page:e2193
ISSN:0894-3370
Container-title:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
language:en
Short-container-title:Int. J. Numer. Model.

Author:

Lakshmi B.¹,Srinivasan R.²

Affiliation:

1. School of Electronics Engineering; VIT University; Chennai India

2. Department of Information Technology; SSN College of Engineering; Chennai India

Funder

Department of Science and Technology, Ministry of Science and Technology

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modelling and Simulation

Link

Reference33 articles.

1. Gate sizing: FinFETs Vs 32 nm bulk MOSFETs, 2006; Proc;Swahn.;Design Automation Conference

2. Gate length scaling and threshold voltage control of double gate MOSFETs, 2000; Proc;Chang.;IEDM

3. FinFET-a quasi-planar double-gate MOSFET, 2001; Proc;Tang;ISSCC

5. RF modeling of 40-nm SOI triple-gate FinFET;Martinez-Lopez;Int J Numer Model El,2015

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5. Impact of high k spacer on RF stability performance of double gate junctionless transistor;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2018-08-08