RF modeling of 40-nm SOI triple-gate FinFET-Reference-Cited by-同舟云学术

RF modeling of 40-nm SOI triple-gate FinFET

Published:2014-10-16 Issue:4 Volume:28 Page:465-478
ISSN:0894-3370
Container-title:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
language:en
Short-container-title:Int. J. Numer. Model.

Author:

Martinez-Lopez A. G.¹,Cerdeira A.²,Tinoco J. C.³,Alvarado J.⁴,Padron W. Y.¹,Mendoza C.¹,Raskin J.-P.⁵

Affiliation:

1. Micro and Nanotechnology Research Centre; MICRONA UV; Calzada Ruiz Cortínez No. 455 Costa Verde 94294 Boca del Río Veracruz Mexico

2. Department of Electrical Engineering; CINVESTAV; Av. IPN No. 2508, A.P. 14-740 07300 Mexico Mexico

3. Energy and Sustainable Resources Research Centre; CIRES UV; Av. Universidad Km 7.5 Col. Santa Isabel 96535 Coatzacoalcos Veracruz Mexico

4. Research Center of Semiconductor Devices; BUAP; Av. San Claudio y 14 Sur 72570 Puebla Mexico

5. Institute of Information and Communication Technologies, Electronics and Applied Mathematics (ICTEAM); Université catholique de Louvain (UCL); Place du Levant, 3 B-1348 Louvain-la-Neuve Belgium

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modeling and Simulation

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5. SOI technology: an opportunity for RF designers?;Raskin;J Telecommun Inf Technol,2009

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