Record RF performance of 45-nm SOI CMOS Technology-Reference-Cited by-同舟云学术

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Record RF performance of 45-nm SOI CMOS Technology

Published:2007-12 Issue: Volume: Page:
ISSN:
Container-title:2007 IEEE International Electron Devices Meeting
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Author:

Lee Sungjae,Jagannathan Basanth,Narasimha Shreesh,Chou Anthony,Zamdmer Noah,Johnson Jim,Williams Richard,Wagner Lawrence,Kim Jonghae,Plouchart Jean-Olivier,Pekarik John,Springer Scott,Freeman Greg

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4418847/4418848/04418916.pdf?arnumber=4418916

Cited by 120 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Gigahertz and terahertz transistors for 5G, 6G, and beyond mobile communication systems;Applied Physics Reviews;2024-08-19

2. RC-Effects on the Oxide of SOI MOSFET under Off-State TDDB Degradation: RF Characterization and Modeling;Micromachines;2024-02-07

3. Design of Millimeter-Wave Asymmetric Single-Pole Double-Throw Switch in a 45nm SOI CMOS Technology;2023 8th International Conference on Integrated Circuits and Microsystems (ICICM);2023-10-20

4. Comparison of single event effect on cascoded low noise amplifier performance metrics for two different frequencies;Physica Scripta;2023-10-19

5. Optimizing RFSOI Performance through a T-shaped Gate and Nano-Second Laser Annealing Techniques;2023 IEEE Radio Frequency Integrated Circuits Symposium (RFIC);2023-06-11

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