3D Investigation of 8-nm Tapered n-FinFET Model
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/content/pdf/10.1007/s12633-019-00253-y.pdf
Reference27 articles.
1. Saremi M, Afzali-Kusha A, Mohammadi S (2012). Microelectron Eng 95:74–82
2. Crupi G, Schreurs DMM-P, Caddemi A, Angelov I, Homayouni M, Raffo A, Vannini G, Parvais B (2009). Microelectron Eng 86:2283–2289
3. Lakshmi B, Srinivasan R (2017). Int J Numer Model 30:e2193
4. Bughio AM, Donati Guerrieri S, Bonani F, Ghione G (2018). Int J Numer Model 31:e2285
5. J P Collinge Springer Berlin, p 350 (2008)
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