Electrical Properties of Polytypic Mg Doped GaAs Nanowires

Author:

Cifuentes N.1ORCID,Viana E. R.2ORCID,Limborço H.1,Roa D. B.13ORCID,Abelenda A.14,da Silva M. I. N.1,Moreira M. V. B.1,Ribeiro G. M.1ORCID,de Oliveira A. G.1,González J. C.1ORCID

Affiliation:

1. Departamento de Física, Instituto de Ciências Exatas, Universidade Federal de Minas Gerais, Avenida Presidente Antônio Carlos 6627, Pampulha, 31270-901 Belo Horizonte, MG, Brazil

2. Departamento Acadêmico de Física, Universidade Tecnológica Federal do Paraná, Campus Curitiba, Avenida Sete de Setembro 3165, Rebouças, 80230-901 Curitiba, PR, Brazil

3. Departamento de Física, Instituto Federal de Minas Gerais, Campus Ouro Preto, Rua Pandiá Calógeras 898, Bauxita, 35400-000 Ouro Preto, MG, Brazil

4. Facultad de Física-ICTM, Universidad de La Habana, Colina Universitária, 10400 La Habana, Cuba

Abstract

The electrical transport properties of individual Mg doped GaAs nanowires are investigated. It is shown that Mg can be successfully used as a nontoxic p-type dopant in GaAs nanowires. The doping levels, expanding over two orders of magnitude, and free holes mobility in the NW were obtained by the analysis of field effect transistors transfer curves. The temperature dependence of the electrical resistivity above room temperature shows that the polytypic structure of the NWs strongly modifies the NWs charge transport parameters, like the resistivity activation energy and holes mobility. At lower temperatures the NWs exhibit variable range hopping conduction. Both Mott and Efros-Shklovskii variable range hopping mechanisms were clearly identified in the nanowires.

Funder

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior

Publisher

Hindawi Limited

Subject

General Materials Science

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