Pressure effects on the metallization and dielectric properties of GaP-Reference-Cited by-同舟云学术

Pressure effects on the metallization and dielectric properties of GaP

Published:2021 Issue:47 Volume:23 Page:26829-26836
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Liu Hao¹²^ORCID,Wang Jia¹³,Zhang Guozhao¹⁴^ORCID,Han Yonghao¹^ORCID,Wu Baojia²,Gao Chunxiao¹^ORCID

Affiliation:

1. State Key Laboratory for Superhard Materials, Jilin University, Changchun 130012, China

2. Department of Physics, College of Science, Yanbian University, Yanji, Jilin 133002, China

3. Institute for Interdisciplinary Biomass Functional Materials Studies, Jilin Engineering Normal University, Changchun 130052, China

4. Shandong Key Laboratory of Optical Communication Science and Technology, School of Physical Science and Information Technology, Liaocheng University, Liaocheng 252059, China

Abstract

GaP was found to transform from a semiconductor to metal conduction at 25.0 GPa. The relative permittivity of GaP in the zb phase was a positive function of pressure.

Funder

National Natural Science Foundation of China

Jilin University

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2021/CP/D1CP03889C

Reference48 articles.

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