Experimental Evidence and Modified Growth Model of Alloying in InxGa1–xAs Nanowires-Reference-Cited by-同舟云学术

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Experimental Evidence and Modified Growth Model of Alloying in InxGa1–xAs Nanowires

Published:2012-11-08 Issue:46 Volume:116 Page:24777-24783
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Andrade R-Ribeiro¹,Malachias A.¹²,Kellerman G.²,Negreiros F. R.¹,Santos N. M.³,Sobolev N. A.³,Moreira M. V. B.¹,de Oliveira A. G.¹,González J. C.¹

Affiliation:

1. Departamento de Física, Instituto de Ciências Exatas, Universidade Federal de Minas Gerais, Postal Code 702, 30123-970, Belo Horizonte, Brazil.

2. Laboratório Nacional de Luz Síncrotron, C.P. 6192, 13083-970, Campinas, SP, Brazil

3. I3N and Departamento de Física, Universidade de Aveiro, 3810-193 Aveiro, Portugal

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp305031h

Reference33 articles.

1. General Synthesis of Compound Semiconductor Nanowires

2. Spatially controlled, nanoparticle-free growth of InP nanowires

3. Markovian and Non-Markovian Light-Emission Channels in Strained Quantum Wires

4. Direct Evidences of Enhanced Ga Interdiffusion in InAs Vertically Aligned Free-Standing Nanowires

5. Failure of the Vapor−Liquid−Solid Mechanism in Au-Assisted MOVPE Growth of InAs Nanowires

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2. Doubling the mobility of InAs/InGaAs selective area grown nanowires;Physical Review Materials;2022-03-16

3. Assembling your nanowire: an overview of composition tuning in ternary III–V nanowires;Nanotechnology;2020-11-24

4. Two-dimensional ordered growth of InAs nanowires assisted by randomly deposited silver nanoparticles on a topographically modified surface by a focused ion beam;Applied Surface Science;2019-11

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