Mg-Doped GaAs Nanowires with Enhanced Surface Alloying for Use as Ohmic Contacts in Nanoelectronic Devices
Author:
Affiliation:
1. Departamento de Física, Universidade Federal de Minas Gerais, Av. Pres. Antônio Carlos 6627, 31270-901 Belo Horizonte, Brazil
2. Department Physik, Universität Siegen, Walter-Flex-Straße 3, 57072 Siegen, Germany
Funder
Funda????o de Amparo ?? Pesquisa do Estado de Minas Gerais
Conselho Nacional de Desenvolvimento Cient??fico e Tecnol??gico
Coordena????o de Aperfei??oamento de Pessoal de N??vel Superior
Brazilian Institute of Science and Technology
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsanm.1c03192
Reference43 articles.
1. Synthesis and Applications of III–V Nanowires
2. Semiconductor nanowires
3. Semiconductor nanowires for 0D and 1D physics and applications
4. 25th Anniversary Article: Semiconductor Nanowires - Synthesis, Characterization, and Applications
5. Structural properties and energetics of GaAs nanowires
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