Preparation of ultra-thick β-SiC films using different carbon sources-Reference-Cited by-同舟云学术

Preparation of ultra-thick β-SiC films using different carbon sources

Published:2015-12-14 Issue:sup10 Volume:19 Page:S10-397-S10-402
ISSN:1432-8917
Container-title:Materials Research Innovations
language:en
Short-container-title:Materials Research Innovations

Author:

Tu R.¹,Zheng D. H.¹,Cheng H.¹,Han M. X.²,Zhang S.¹,Goto T.²

Affiliation:

1. State Key Laboratory of Advanced Technology for Materials Synthesis and ProcessingWuhan University of Technology, 122 Luoshi Road, Wuhan 430070, China

2. Institute for Materials ResearchTohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

Publisher

Informa UK Limited

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.tandfonline.com/doi/pdf/10.1179/1432891715Z.0000000002205

Reference32 articles.

1. Chloride-Based CVD Growth of Silicon Carbide for Electronic Applications

2. SiC-Matrix Composites: Nonbrittle Ceramics for Thermo-Structural Application

3. Silicon Carbide as a Platform for Power Electronics

4. Densification of silicon carbide using oxy-nitride additives for space-based telescope mirror applications

5. High-Speed Epitaxial Growth of β-SiC Film on Si(111) Single Crystal by Laser Chemical Vapor Deposition

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