The effect of diluent gases on the growth of β-SiC films by laser CVD with HMDS-Reference-Cited by-同舟云学术

The effect of diluent gases on the growth of β-SiC films by laser CVD with HMDS

Published:2015-12-14 Issue:sup10 Volume:19 Page:S10-403-S10-407
ISSN:1432-8917
Container-title:Materials Research Innovations
language:en
Short-container-title:Materials Research Innovations

Author:

Zhu P. P.¹,Tu R.¹,Zhang S.¹,Han M. X.²,Xu Q. F.¹,Sun Q. Y.¹,Zhang L. M.¹,Goto T.²,Yan J. S.³,Li S. S.³

Affiliation:

1. State Key Laboratory of Advanced Technology for Materials Synthesis and ProcessingWuhan University of Technology, 122 Luoshi Road, 430070 Wuhan, People's Republic of China

2. Institute for Materials ResearchTohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

3. Tech Semiconductors Ltd, 441000, Xiangyang, People's Republic of China.

Publisher

Informa UK Limited

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.tandfonline.com/doi/pdf/10.1179/1432891715Z.0000000002208

Reference30 articles.

1. Epitaxial SiC Growth Morphology and Extended Defects Investigated by Electron Backscatter Diffraction and Electron Channeling Contrast Imaging

2. Nucleation of 3C–SiC on 6H–SiC from a liquid phase

3. Characterization of polycrystalline 3C-SiC films deposited from the precursors 1,3-disilabutane and dichlorosilane

4. Growth and effect of deposition pressure on microstructure and electrical properties of 3C-SiC thin films deposited using methyltrichlorosilane single precursor

5. Heteroepitaxial Growth of Single 3C-SiC Thin Films on Si (100) Substrates Using a Single-Source Precursor of Hexamethyldisilane by APCVD

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