Characterization of polycrystalline 3C-SiC films deposited from the precursors 1,3-disilabutane and dichlorosilane
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2907871
Reference21 articles.
1. Silicon carbide for microelectromechanical systems
2. Tribological Impact of SiC Encapsulation of Released Polycrystalline Silicon Microstructures
3. Single-Source Chemical Vapor Deposition of 3C-SiC Films in a LPCVD Reactor
4. High-selectivity etching of polycrystalline 3C-SiC films using HBr-based transformer coupled plasma
5. Nitrogen doping of polycrystalline 3C-SiC films grown using 1,3-disilabutane in a conventional LPCVD reactor
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1. Microcrystalline Structure and Light-Emitting Properties of 3C–SiC Island Films Grown on the Si(100) Surface;Physics of the Solid State;2019-07
2. Spectroscopic phonon and extended x-ray absorption fine structure measurements on 3C-SiC/Si (001) epifilms;Applied Surface Science;2018-01
3. On the pressure-dependent phonon characteristics and anomalous thermal expansion coefficient of 3C-SiC;Materials Science and Engineering: B;2017-12
4. The effect of diluent gases on the growth of β-SiC films by laser CVD with HMDS;Materials Research Innovations;2015-12-14
5. Probing optical, phonon, thermal and defect properties of 3C–SiC/Si (001);Diamond and Related Materials;2015-02
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