Nucleation of 3C–SiC on 6H–SiC from a liquid phase-Reference-Cited by-同舟云学术

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Nucleation of 3C–SiC on 6H–SiC from a liquid phase

Published:2007-12 Issue:20 Volume:55 Page:6873-6880
ISSN:1359-6454
Container-title:Acta Materialia
language:en
Short-container-title:Acta Materialia

Author:

Soueidan Maher,Ferro Gabriel,Kim-Hak Olivier,Robaut Florence,Dezellus Olivier,Dazord Jacques,Cauwet François,Viala Jean-Claude,Nsouli Bilal

Publisher

Elsevier BV

Subject

Metals and Alloys,Polymers and Plastics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference40 articles.

1. Properties of Silicon Carbide;Harris,1995

2. Semicondutor Interfaces, Microstructures, and Devices: Properties and Applications;Powell,1993

3. Very Low Interface State Density From Thermally Oxidized Single-Domain 3C–SiC/6H–SiC Grown by Vapour–Liquid–Solid Mechanism

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1. Preparation of SiC coated graphite composite powders by nitriding combustion synthesis;Journal of Advanced Ceramics;2023-10

2. Growth and doping of silicon carbide with germanium: a review;Critical Reviews in Solid State and Materials Sciences;2021-03-24

3. Sublimation Growth of Hexagonal and Cubic SiC Layers;Reference Module in Materials Science and Materials Engineering;2016

4. The effect of diluent gases on the growth of β-SiC films by laser CVD with HMDS;Materials Research Innovations;2015-12-14

5. Examination of the interaction between liquid silicon and bulk silicon carbide;Journal of Crystal Growth;2015-09

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