Growth and effect of deposition pressure on microstructure and electrical properties of 3C-SiC thin films deposited using methyltrichlorosilane single precursor-Reference-Cited by-同舟云学术

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Growth and effect of deposition pressure on microstructure and electrical properties of 3C-SiC thin films deposited using methyltrichlorosilane single precursor

Published:2013-09-01 Issue:3 Volume:2 Page:163-170
ISSN:2090-9519
Container-title:International Journal of Thin Films Science and Technology
language:
Short-container-title:Int. J. Thin Film Sci. Tec.

Author:

K. E. Latha H.,Udayakumar A.,Siddeswara Prasad V.

Publisher

Natural Sciences Publishing

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Mechanics of Materials

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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3. Green synthesis of ITO nanoparticles using Carica papaya seed extract: impact of annealing temperature on microstructural and electrical properties of ITO thin films for sensor applications;Materials Technology;2021-07-19

4. Effect of deposition temperature on microstructure properties of SiC thin films deposited using RF magnetron sputtering;AIP Conference Proceedings;2019

5. The effect of diluent gases on the growth of β-SiC films by laser CVD with HMDS;Materials Research Innovations;2015-12-14

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