Electromigration for microarchitects

Author:

Abella Jaume1,Vera Xavier1

Affiliation:

1. Intel Barcelona Research Center, Intel Labs -- UPC, Barcelona, Spain

Abstract

Degradation of devices has become a major issue for processor design due to continuous device shrinkage and current density increase. Transistors and wires suffer high stress, and failures may appear in the field. In particular, wires degrade mainly due to electromigration when driving current. Techniques to mitigate electromigration to some extent have been proposed from the circuit point of view, but much effort is still required from the microarchitecture side to enable wire scaling in future technologies. This survey brings to the microarchitecture community a comprehensive study of the causes and implications of electromigration in digital circuits and describes the challenges that must be faced to mitigate electromigration by means of microarchitectural solutions.

Funder

Generalitat de Catalunya

Ministerio de Educación, Cultura y Deporte

Publisher

Association for Computing Machinery (ACM)

Subject

General Computer Science,Theoretical Computer Science

Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Electromigration-Aware Memory Hierarchy Architecture;Journal of Low Power Electronics and Applications;2023-07-11

2. Electromigration-Aware Architecture for Modern Microprocessors;Journal of Low Power Electronics and Applications;2023-01-11

3. Stress-Aware Periodic Test of Interconnects;Journal of Electronic Testing;2021-12

4. Worst-Case Energy Consumption: A New Challenge for Battery-Powered Critical Devices;IEEE Transactions on Sustainable Computing;2021-07-01

5. Dynamic Multi-Frequency Test Method for Hidden Interconnect Defects;2020 IEEE 38th VLSI Test Symposium (VTS);2020-04

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