Low-leakage robust SRAM cell design for sub-100nm technologies-Reference-Cited by-同舟云学术

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Low-leakage robust SRAM cell design for sub-100nm technologies

Published:2005 Issue: Volume: Page:
ISSN:
Container-title:Proceedings of the 2005 conference on Asia South Pacific design automation - ASP-DAC '05
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Author:

Yang Shengqi,Wolf Wayne,Wang Wenping,Vijaykrishnan N.,Xie Yuan

Publisher

ACM Press

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Schmitter trigger-based single-ended stable 7T SRAM cell;Analog Integrated Circuits and Signal Processing;2023-09-23

2. Analyzing the Effect of Uncertainty in Low Power SRAM Cells Using Artificial Intelligence Technique;Journal of Uncertain Systems;2022-04-06

3. Low power performance SRAM cell design;Materials Today: Proceedings;2021-02

4. Single-Ended Low Power Robust 9T Static Random Access Memory Using FinFETs;Lecture Notes in Electrical Engineering;2020

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