Schmitter trigger-based single-ended stable 7T SRAM cell-Reference-Cited by-同舟云学术

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Schmitter trigger-based single-ended stable 7T SRAM cell

Published:2023-09-23 Issue:1 Volume:118 Page:157-170
ISSN:0925-1030
Container-title:Analog Integrated Circuits and Signal Processing
language:en
Short-container-title:Analog Integr Circ Sig Process

Author:

Kumar Appikatla Phani,Lorenzo Rohit

Publisher

Springer Science and Business Media LLC

Subject

Surfaces, Coatings and Films,Hardware and Architecture,Signal Processing

Link

https://link.springer.com/content/pdf/10.1007/s10470-023-02185-5.pdf

Reference30 articles.

1. Calhoun, B.H., Ryan, J.F., Khanna, S., Putic, M., Lach, J., & Flexible (2010). Circuits and architectures for ultralow power. In Proceedings of the IEEE, vol. 98 no. 2, pp. 267–282.

2. Shengqi Yang, W., Wolf, W., Wang, N., Vijaykrishnan, & Xie, Y. (2005). Low-leakage robust SRAM cell design for sub-100nm technologies. In Proceedings of the 2005 Asia and South Pacific Design Automation Conference, pp. 539–544.

3. Soeleman, H., & Roy, K. (1999). Ultra-low power digital subthreshold logic circuits. In Proceedings. 1999 International Symposium on Low Power Electronics and Design, pp. 94–96.

4. Pasandi, G., Fakhraie, S., & Mehdi (2015). A 256-kb 9T near-threshold SRAM with 1k cells per bitline and enhanced write and read Operations. IEEE Transactions on Very Large-Scale Integration (VLSI) Systems, 23(11), 2438–2446.

5. Baumann, R. C. (2005). Radiation-induced soft errors in advanced semiconductor technologies. IEEE Transactions on Device and Materials Reliability, 5(3), 305–316.

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A FinFET-based low-power, stable 8T SRAM cell with high yield;AEU - International Journal of Electronics and Communications;2024-02

2. LP 8T SRAM: Design of New Technique SRAM With Reduced Power Consumption;2023 International Symposium on Fundamentals of Electrical Engineering (ISFEE);2023-11-16

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