Standard Cell Layout Regularity and Pin Access Optimization Considering Middle-of-Line
Author:
Affiliation:
1. University of Texas at Austin, Austin, TX, USA & Zhejiang University, Hangzhou, China
2. University of Texas at Austin, AUSTIN, TX, USA
3. LG Electronics, Seoul, South Korea
4. IBM Corporation, Hopewell Junction, NY, USA
Publisher
ACM
Link
https://dl.acm.org/doi/pdf/10.1145/2742060.2742084
Reference24 articles.
1. Design for Manufacturing With Emerging Nanolithography
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