Study of the Etching Reactions on SiO2 Caused by CFx+ (x=1, 2, 3) Ion Irradiation
Author:
Affiliation:
1. Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University
Publisher
Surface Science Society Japan
Subject
General Earth and Planetary Sciences,General Engineering,General Environmental Science
Link
http://www.jstage.jst.go.jp/article/jsssj/28/2/28_2_60/_pdf
Reference16 articles.
1. 1) M.A. Lieberman and A.J. Lichtenberg: “Principles of Plasma Discharges and Materials Processing” (Wiley-Interscience, New York, 2005).
2. Dielectric film etching in semiconductor device manufacturing
3. 3) J.W. Coburn, H.F. Winters and T.J. Chuang: J. Appl. Phys. 48, 3532 (1977).
4. Ion‐ and electron‐assisted gas‐surface chemistry—An important effect in plasma etching
5. Chemical sputtering yields of silicon resulting from F+, CFn+ (n= 1,2,3) ion bombardment
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