Real-time low-energy electron microscopy study of Ga adsorption and facet array formation on Si(113)
Author:
Affiliation:
1. Institute of Solid State Physics, University of Bremen, Germany
2. Sincrotrone Trieste, Italy
3. Laboratorio Nazionale TASC INFM-CNR, Italy
4. SPring-8/JASRI, Japan
Publisher
Surface Science Society Japan
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Mechanics of Materials,Condensed Matter Physics,Bioengineering,Biotechnology
Link
http://www.jstage.jst.go.jp/article/ejssnt/3/0/3_0_379/_pdf
Reference12 articles.
1. A comparative study of the thermal stability of the (103) surface of group-III-metal/group-IV-semiconductor systems
2. Self-organization of Ge islands on high-index Si substrates
3. Self-assembled Ge nanowires grown on Si(113)
4. Strain relaxation of faceted Ge islands on Si(113)
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Applications in Surface Science;Surface Microscopy with Low Energy Electrons;2014
2. Ge Growth on Partially and Entirely Ag Covered Si(111);e-Journal of Surface Science and Nanotechnology;2010
3. Silver: a novel growth catalyst for Ge nanoislands on Si(113);physica status solidi (RRL) - Rapid Research Letters;2009-10-07
4. From nanoislands to nanowires: Growth of germanium on gallium-terminated silicon surfaces;physica status solidi (a);2009-06-22
5. STM study of Si(113) 3×2-Ga surface;Surface Science;2009-05
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