Strain relaxation of faceted Ge islands on Si(113)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.125025
Reference15 articles.
1. Photoluminescence study of the crossover from two‐dimensional to three‐dimensional growth for Ge on Si(100)
2. Shape Transition of Germanium Nanocrystals on a Silicon (001) Surface from Pyramids to Domes
3. Shape transition in growth of strained islands: Spontaneous formation of quantum wires
4. In situ measurements of temperature-dependent strain relaxation of Ge/Si(111)
5. Equilibrium shape of Si
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3. Shape and Size Distribution of Molecular Beam Epitaxy Grown Self-Assembled Ge Islands on Si (001) Substrates;Journal of Nanoscience and Nanotechnology;2008-08-01
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5. Single and coupled quantum wells: SiGe;Optical Properties. Part 3;2007
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