In situ measurements of temperature-dependent strain relaxation of Ge/Si(111)-Reference-Cited by-同舟云学术

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In situ measurements of temperature-dependent strain relaxation of Ge/Si(111)

Published:1997-05 Issue:3 Volume:15 Page:930-935
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Deelman P. W.,Schowalter L. J.,Thundat T.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.580626

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dynamical evolution of Ge quantum dots on Si(111): From island formation to high temperature decay;Aggregate;2022-04-22

2. Monolayer-Scale GaN/AlN Multiple Quantum Wells for High Power e-Beam Pumped UV-Emitters in the 240–270 nm Spectral Range;Nanomaterials;2021-09-29

3. Comparison of the Growth Processes of Germanium Quantum Dots on the Si(100) and Si(111) Surfaces;Russian Physics Journal;2018-03

4. Comparative analysis of germanium–silicon quantum dots formation on Si(100), Si(111) and Sn/Si(100) surfaces;Nanotechnology;2018-01-05

5. In situ observation of low temperature growth of Ge on Si(1 1 1) by reflection high energy electron diffraction;Applied Surface Science;2016-05

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