Redox transistors for neuromorphic computing-Reference-Cited by-同舟云学术

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Redox transistors for neuromorphic computing

Published:2019-11-01 Issue:6 Volume:63 Page:9:1-9:9
ISSN:0018-8646
Container-title:IBM Journal of Research and Development
language:
Short-container-title:IBM J. Res. & Dev.

Author:

Fuller E. J.,Li Y.,Bennet C.,Keene S. T.,Melianas A.,Agarwal S.,Marinella M. J.,Salleo A.,Talin A. A.

Funder

Sandia's Laboratory-Directed Research and Development Program

Publisher

IBM

Subject

General Computer Science

Link

http://xplorestaging.ieee.org/ielx7/5288520/8894910/08844096.pdf?arnumber=8844096

Cited by 33 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ferroelastic twin walls for neuromorphic device applications;Frontiers in Materials;2024-08-14

2. Hydrogel‐Based Artificial Synapses for Sustainable Neuromorphic Electronics;Advanced Materials;2024-08

3. Heavy-Ion-Induced Displacement Damage Effects on WO _x ECRAM;IEEE Transactions on Nuclear Science;2024-04

4. Replicating the Bright-Light Therapy of Seasonal Affective Disorder Using Dual-Gate Dielectric Synaptic Transistors: An Exploration of Neuromorphic Computing Approaches;ACS Applied Electronic Materials;2024-02-28

5. Redox Gating for Colossal Carrier Modulation and Unique Phase Control;Advanced Materials;2024-01-14

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