CMOS scaling beyond the 100-nm node with silicon-dioxide-based gate dielectrics-Reference-Cited by-同舟云学术

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CMOS scaling beyond the 100-nm node with silicon-dioxide-based gate dielectrics

Published:2002-03 Issue:2.3 Volume:46 Page:287-298
ISSN:0018-8646
Container-title:IBM Journal of Research and Development
language:
Short-container-title:IBM J. Res. & Dev.

Author:

Wu E. Y.,Nowak E. J.,Vayshenker A.,Lai W. L.,Harmon D. L.

Publisher

IBM

Subject

General Computer Science

Link

http://xplorestaging.ieee.org/ielx5/5288520/5388985/05389002.pdf?arnumber=5389002

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