Electron Microscope Studies Of Vpe Gainas Layer Structures Suitable For Use As Infrared Leds
Author:
Publisher
Wiley
Subject
Histology,Pathology and Forensic Medicine
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1111/j.1365-2818.1980.tb00254.x/fullpdf
Reference12 articles.
1. Like-sign asymmetric dislocations in zincblende structure;Abrahams;Appl. Phys. Letters,1972
2. Dislocation morphology in graded hetero-junctions: GaAs1-xPx;Abrahams;J. Mater. Sci.,1969
3. X-ray topography and diode efficiency of vapour grown GaAs1-xPx layers;Bartels;J. Crystal Growth,1976
4. Characterization of vapour grown (001) GaAs1-xPx layers by selective photo-etching;Blok;J. Crystal Growth,1975
5. Characterization of defects in GaP and GaAsP graded heterojunctions by transmission electron microscopy;Dupuy;J. Crystal Growth,1975
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1. Compositionally graded Ga1−xInxP buffers grown by static and dynamic hydride vapor phase epitaxy at rates up to 1 μm/min;Applied Physics Letters;2021-02-01
2. Design and characterization of thick InxGa1-xAs metamorphic buffer layers grown by hydride vapor phase epitaxy;Semiconductor Science and Technology;2014-02-12
3. Misfit dislocations in strained InxGa1−xAs heterostructure on patterned GaAs (001) substrate;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-11
4. High-Voltage Electron Microscopy Analysis of Misfit Dislocations in GaP1−xAsx Light Emitting Diode;Journal of the Japan Institute of Metals;1991
5. Misfit Dislocations in Inx Ga1-xAs/GaAs Heterostructures near the Critical Thickness;Evaluation of Advanced Semiconductor Materials by Electron Microscopy;1989
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