Compositionally graded Ga1−xInxP buffers grown by static and dynamic hydride vapor phase epitaxy at rates up to 1 μm/min-Reference-Cited by-同舟云学术

Compositionally graded Ga1−xInxP buffers grown by static and dynamic hydride vapor phase epitaxy at rates up to 1 μm/min

Published:2021-02-01 Issue:5 Volume:118 Page:052106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Schulte Kevin L.¹^ORCID,Diercks David R.²^ORCID,Guthrey Harvey L.¹^ORCID,Mangum John S.¹^ORCID,Packard Corinne E.¹²^ORCID,Metaferia Wondwosen¹^ORCID,Simon John¹^ORCID,Ptak Aaron J.¹^ORCID

Affiliation:

1. National Renewable Energy Laboratory, Golden, Colorado 80401, USA

2. Colorado School of Mines, Golden, Colorado 80401, USA

Funder

Advanced Research Projects Agency - Energy

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/am-pdf/10.1063/5.0040605

Reference30 articles.

1. Six-junction III–V solar cells with 47.1% conversion efficiency under 143 Suns concentration

2. Growth, microstructure, and luminescent properties of direct-bandgap InAlP on relaxed InGaAs on GaAs substrates

3. Dark current analysis and characterization of In/sub x/Ga/sub 1-x/As/InAs/sub y/P/sub 1-y/ graded photodiodes with x<0.53 for response to longer wavelengths (<1.7 mu m)

4. Dislocation dynamics in relaxed graded composition semiconductors

5. Sb surfactant-mediated SiGe graded layers for Ge photodiodes integrated on Si

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