Inverted metamorphic GaInAs solar cell grown by dynamic hydride vapor phase epitaxy-Reference-Cited by-同舟云学术

Inverted metamorphic GaInAs solar cell grown by dynamic hydride vapor phase epitaxy

Published:2021-08-30 Issue:9 Volume:119 Page:092101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Schulte Kevin L.¹^ORCID,Diercks David R.²^ORCID,Guthrey Harvey L.¹^ORCID,Young Matthew R.¹^ORCID,Packard Corinne E.¹²^ORCID,Simon John¹^ORCID,Ptak Aaron J.¹^ORCID

Affiliation:

1. National Renewable Energy Laboratory, Golden, Colorado 80401, USA

2. Colorado School of Mines, Golden, Colorado 80401, USA

Funder

Advanced Research Projects Agency - Energy

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0061350

Reference26 articles.

1. Six-junction III–V solar cells with 47.1% conversion efficiency under 143 Suns concentration

2. Organometallic vapor phase epitaxy growth of upright metamorphic multijunction solar cells

3. 0.52 eV InGaAs/InPAs Thermophotovoltaic Cells

4. Inverted metamorphic AlGaInAs/GaInAs tandem thermophotovoltaic cell designed for thermal energy grid storage application

5. Growth, microstructure, and luminescent properties of direct-bandgap InAlP on relaxed InGaAs on GaAs substrates

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