Misfit Dislocations in Inx Ga1-xAs/GaAs Heterostructures near the Critical Thickness
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Publisher
Springer US
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http://link.springer.com/content/pdf/10.1007/978-1-4613-0527-9_29.pdf
Reference27 articles.
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3. P. J. Orders and B. F. Usher, Determination of critical layer thickness in InxGa1-xAs/GaAs heterostructures by X-ray diffraction, Appl. Phys. Lett. 50:1604 (1987)
4. E. A. Fitzgerald, D. G. Ast, P. D. Kirchner, G. D. Pettit and J. M. Woodall, Structure and recombination in InGaAs/GaAs heterostructures, J. Appl. Phys. 63:693 (1988)
5. M. Hockly, M. Al-Jassim, G. R. Booker and R. Nicklin, Electron microscope studies of VPE GaInAs layer structures suitable for use as infrared LEDs, J. Microscopy 118:117 (1980)
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1. Critical thickness determination of InxGa1-xAs/GaAs strained-layer system by transmission electron microscopy;Journal of Electronic Materials;1991-07
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