Characterization of defects in GaP and GaAsP graded heterojunctions by transmission electron microscopy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
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2. Characterization survey of GaxIn1−xAs/InAsyP1−y double heterostructures and InAsyP1−y multilayers grown on InP;Journal of Electronic Materials;2004-03
3. Formation of Abnormal Etch Pits on (111)P Surface of n-GaP Crystal;Materials Transactions, JIM;2000
4. Deformation and thermal oxidation of GaAsP wafers locally heated by a Nd:Y3Al5O12(yttrium aluminum garnet) laser beam;Journal of Applied Physics;1992-11-15
5. High-Voltage Electron Microscopy Analysis of Misfit Dislocations in GaP1−xAsx Light Emitting Diode;Journal of the Japan Institute of Metals;1991
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