Using a <670> zone axis for convergent beam electron diffraction measurements of lattice strain in strained silicon
Author:
Publisher
Wiley
Subject
Histology,Pathology and Forensic Medicine
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1111/j.1365-2818.2010.03364.x/fullpdf
Reference18 articles.
1. Application of convergent beam electron diffraction to two-dimensional strain mapping in silicon devices;Armigliato;Appl. Phys. Lett,2003
2. Improving spatial resolution of convergent beam electron diffraction strain mapping in silicon microstructures;Armigliato;Appl. Phys. Lett,2005
3. Nanometer scale characterisation of CoSi2 and NiSi induced strain in Si by convergent beam electron diffraction;Benedetti;Mater. Sci. Eng. B,2004
4. Chidambaram, P.R. , Smith, B.A. , Hall, L.H. et al. (2004) 35% drive current improvement from recessed-SiGe drain extensions on 37 nm gate length PMOS. 2004 Symp. on VLSI Tech. Dig. of Technical Papers, 48-49. Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, USA.
5. Strain measurements by convergent-beam electron diffraction: the importance of stress relaxation in lamella preparations;Clément;Appl. Phys. Lett,2004
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2. 4D‐STEM Nanoscale Strain Analysis in van der Waals Materials: Advancing beyond Planar Configurations;Small Science;2024-01-12
3. Comparison of convergent beam electron diffraction and geometric phase analysis for strain measurement in a strained silicon device;Journal of Microscopy;2011-01-11
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