The microstructure, local indium composition and photoluminescence in green-emitting InGaN/GaN quantum wells-Reference-Cited by-同舟云学术

The microstructure, local indium composition and photoluminescence in green-emitting InGaN/GaN quantum wells

Published:2017-10-11 Issue:3 Volume:268 Page:305-312
ISSN:0022-2720
Container-title:Journal of Microscopy
language:en
Short-container-title:Journal of Microscopy

Author:

CHERY N.¹^ORCID,NGO T.H.²,CHAUVAT M.P.¹,DAMILANO B.³,COURVILLE A.³,DE MIERRY P.³,GRIEB T.⁴,MEHRTENS T.⁴,KRAUSE F.F.⁴,MÜLLER-CASPARY K.⁴,SCHOWALTER M.⁴,GIL B.²,ROSENAUER A.⁴,RUTERANA P.¹

Affiliation:

1. CIMAP; 6 Boulevard du Maréchal Juin; Caen France

2. Laboratoire Charles Coulomb, Batiment 21, Campus Triolet; Université de Montpellier; Montpellier France

3. Université Côte d'Azur, CRHEA, CNRS; France

4. Institut für Festkörperphysik; Universität Bremen; Otto-Hahn-Allee 1 Bremen Germany

Funder

FEDER EU

Publisher

Wiley

Subject

Histology,Pathology and Forensic Medicine

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1111/jmi.12657/fullpdf

Reference35 articles.

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3. Direct measurement of local lattice distortions in strained layer structures by HREM;Bierwolf;Ultramicroscopy,1993

4. Iodine ion milling of indium?containing compound semiconductors;Chew;Appl. Phys. Lett.,1984

5. Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors;Chichibu;Nat. Mater.,2006

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