The electronic structure of molecular beam epitaxy grown InAs (110)

Abstract

The initial state dispersion of the two-dimensional electronic surface states on the nonpolar InAs(110) surface has been measured using momentum-resolved photoelectron spectroscopy with synchrotron radiation. The InAs(110) surfaces were grown using molecular beam epitaxy on a GaAs(110) substrate. The A5 surface state, which arises from the surface As lone pair, is split off from the bulk bands away from the surface zone centre and is clearly visible in the photoemission spectra at the high symmetry points ([Formula: see text], [Formula: see text] and [Formula: see text]) of the surface reciprocal lattice. Lower lying surface states overlap more strongly with the bulk bands and consequently it is harder to determine their band dispersion. To alleviate this problem we have applied nonlinear line shape analysis techniques to the valence bands. We demonstrate the viability of this approach to extract the binding energy and width of optical transitions.