Optical properties of the cleavage InAs(110) surface
Author:
Affiliation:
1. Instituto de Física, Universidad Autónoma de Puebla, Apartado Postal J‐48, Puebla 72570, México
2. Instituto de Física, UNAM, Apdo. Postal 20‐364, D.F. 01000, México
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200303842
Reference23 articles.
1. Calculated atomic structures and electronic properties of GaP, InP, GaAs, and InAs (110) surfaces
2. Sb overlayers on (110) surfaces of III-V semiconductors: Total-energy minimization and surface electronic structure
3. Symmetry and size effects on the determination of critical indices
4. Comparison betweenab initiotheory and scanning tunneling microscopy for (110) surfaces of III-V semiconductors
5. Electronic properties of antimony monolayers on III–V (110) surfaces: a comparative study by reflectance anisotropy spectroscopy and microscopic tight-binding calculations
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1. Spin-orbit effects on reflectance anisotropy spectroscopy;Physical Review B;2004-10-12
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