Calculated atomic structures and electronic properties of GaP, InP, GaAs, and InAs (110) surfaces
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.44.6188/fulltext
Reference64 articles.
1. Direct determination of III-V semiconductor surface band gaps
2. Surface Intervalley Scattering on GaAs(110): Direct Observation with Picosecond Laser Photoemission
3. Surface electronic bands of GaAs(110) determined by angle-resolved inverse photoemission
4. Angle-resolved inverse photoemission of GaP(110)
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