Angle-resolved inverse photoemission of GaP(110)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference16 articles.
1. Photoemission and band‐structure studies of the GaAs(110) surface
2. Calculation of the atomic geometries of the (110) surfaces of III–V compound semiconductors
3. Theoretical study of the electronic structure of GaP(110)
4. Relation of Schottky Barriers to Empty Surface States on III-V Semiconductors
5. Electronic surface properties of Ga and In containing III–V compounds
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2. Comparison betweenab initiotheory and scanning tunneling microscopy for (110) surfaces of III-V semiconductors;Physical Review B;1998-09-15
3. Optical transitions at the Si(111)-Pb(√3 × √3) mosaic phase;Surface Science;1997-06
4. Electrons on CdTe(110) surface;Journal of Electron Spectroscopy and Related Phenomena;1995-12
5. Two-photon photoelectron spectroscopy of GaP(110) after sputtering, annealing, and multishot laser damage;Physical Review B;1995-11-15
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