Theoretical study of the electronic structure of GaP(110)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.24.6029/fulltext
Reference51 articles.
1. Electronic surface properties of uhv-cleaved III–V compounds
2. Electronic surface states on cleaved GaP(110): Initial steps of the oxygen chemisorption
3. Relation of Schottky Barriers to Empty Surface States on III-V Semiconductors
4. Surface states on gallium phosphide
5. Electron loss spectroscopy of clean and oxygen covered GaAs(110) surfaces
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